After summarizing the fundamentals of reverse offset printing, details on the patterning mechanism and contact mechanics encountered during the process are shown together with the design concept of the ink formulation. spreading, splitting, coalescence, bulges, and coffee ring shapes) can be avoided, and single- μm features can be achieved. The patterning principle transforms from wetting to adhesion and fracture resolution problems encountered during the patterning of liquid inks (e.g. Advanced printing methods, including reverse offset printing and adhesion contrast planography, use absorption of ink solvents by polydimethylsiloxane (PDMS) to semi-solidify inks before ink-transfer. Mechanisms, materials, and processes of high-resolution printing techniques dedicated to printed electronics are reviewed. The mechanism of this dynamic V th will be explained and its impact on circuit operation will be illustrated. The V th of the GaN power transistor is found to be bias-dependent and to exhibit dynamic behavior during power switching operation.
For the design of GaN power ICs, the unique device physics of GaN power devices should be carefully considered.
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By adopting a charge pump unit, the novel gate driver in this work enables rail-to-rail output voltage, fast switching speed and enhanced reliability.
As an example of a GaN power IC, an integrated gate driving circuit is demonstrated. The low-voltage components are preferably fabricated using the same process steps of the power switch to be cost-effective. This paper will first discuss the GaN power integration platform, which requires not only a high-voltage power switch, but also peripheral low-voltage transistors, diodes, resistors, capacitors, etc. GaN power ICs provide an elegant solution for high-frequency power switching applications.
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